Temperature. 



0-230° 

 220—250 

 250—300 



0—110° 

 100—140 very variable 



110—300 

 300—400 



absorption of 0.8 Cal. in 

 the neighbourhood of 1 10° 



0.105 



11.36 + 0.105 {t -110) 



/ 31.4 + 0.122 (^-300) 



Q .r,^ V increases rapidly above 400° and 

 ' amounts to 46 Cal. in the neigh- 

 \ bourhood of 410° immediately 

 ' before melting. 



Al. 



0—300° 0.22 



300—530 0.30 



Te crystallization of the silicium 

 occurs at + 500° and the break 

 530-560 \ lies with Al which contains Si in 

 the neighbourhood of this tempe- 

 rature 



540—600 0.46 



0.22/ 

 65 -f 0.30 (/— 300) 



Absorption of 10 Cal. in the 

 neighbourhood of 535° 



139 + 0.46 (/— 530) 

 no Cal. at + 600°; increases 

 rapidly and exceeds 200 before 

 melting (620°). 



0—260° 

 260—660 



660-900 



Ag. 



0.0565 

 0.075 



0.066 



0.0565/ 



14.7 + 0.075 (/-260) 



44.7 + 0.066 (/— 660) 

 62Cal. at + 930, imme- 

 diately below the melt- 

 ing point. 



0—360^ 

 320-380 

 360—580 

 560—600 

 580—780 

 740—800 



780-1000 



Cu. 



0.104 



0.104 



0.125 



0.125 



0.09 



0.09 



0.118 



0.104/ 

 Absorption of 2 Cal. at ± 350° 



37.2 + 0.125 (/— 360) 

 Absorption of 2 Cal. at + 580° 



37 + 0.09 (/-580) 



Absorption of 3 . 5 Cal. at ± 780° 



92 + 0.118 (/— 800) 



117 Gal. at + 1020°. 



