PROPERTIES OF IONIC hOMHAHDED SILICON 



113 



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-5 5 -10 -5 5 -10 -5 5 -15 -10 -5 5 10 

 VOLTAGE 



Fig. 5 — Characteristics showing effects of voltage and temperature variation. 



25°C to 395°C each at accelerating voltages of 1 kv, 3 kv, 10 kv and 30 

 kv using helium gas. The data so obtained were useful not only for study- 

 ing the effect of temperature but useful in the studies of the effect of 

 ion \Tlocity as well. The latter will l)e discussed in the following section. 

 The results of the above measurements are plotted in Fig. o. They 

 are further summarized in Fig. (ja. The latter figure, in particular, indi- 

 cates that as rectifiers, there is little choice of surface temperature be- 

 tween about 250°C and 400°C. It has been found, however, that for 

 temperatures below about 250°C the point contact seems to be more 

 vulnerable to electrical shock. 



