114 THE BELL SYSTEM TECHNICAL JOURNAL, JANUARY 1952 



EFFECT OF ION VELOCITY 



The effect of ion velocity (bombarding voltage) has been investigated 

 for several types of silicon. The effects vary with the different types. 

 Typical results are those given in Fig. 5 already referred to. It will be 

 noted from a comparison of the tlata for a particular temperature, say 

 300°C, that the principal effect of increased ion velocity is that of increas- 

 ing the reverse voltage. Values of these reverse voltages Eb and also the 



60 100 150 200 250 300 350 400 450 600 



TARGET TEMPERATURE IN DEGREES CENTIGRADE 



< 0.6 



1.6 2.0 2.6 3.0 3.5 4,0 

 LOG-f (bombarding VOLTAGE) 



Fig. 

 voltage 

 voltage 



6 — Summary of data of Fig. 5. (a) effect of temperature and bombarding 

 on self biasing voltage; (b) effect of bombarding voltage on reverse 



