PRESENT STATUS OF TRANSISTOR DEVELOPMENT 441 



With regard to miniaturization, \\\v comparison figures are so great 

 as to speak for themselves. ()))eration with a few milliwatts is always 

 feasible and in some cases operation at a few microwatts is also possil)le. 



With regard to performance range, it is heheved that the above results 

 imply the following tentative conclusions: 



In pulse systcniis (up to 1-2 mc repetition rates) transistors should be 

 considered seriously in comparison to tubes, since they provide essen- 

 tially equal functional performance and have marked superiority in 

 miniature space and power. Bear in mind that in some reliability figures 

 they are superior whereas in the matter of temperature dependence 

 they are inferior to tubes. 



In CW transmission at low freriuencies (<1 mc) essentially the same 

 conclusions are indicated, primarily because of junction transistors. In 

 the range from 1-100 mc, tubes are currently superior in every functional 

 performance figure (except perhaps noise and bandwidth) so that for 

 transistors to be considered for such applications, much greater premium 

 must be placed on miniaturization and reliability than for the first two 

 applications areas. 



Thus, it might be assumed that, even though there are many out- 

 standing development problems of a circuit and device nature to be 

 solved, it is appropriate for circuit engineers to explore serioush' the 

 application possibilities of transistors — not only in the hope of building 

 better systems, but also to influence transistor development towards 

 those most important systems for which their intrinsic potentialities 

 best fit them. It should not be inferred that all important limitations 

 have been eliminated — nor, on the other hand, that the full range of 

 performance possibilities have been explored. 



If one remembers the history of engineering research and development 

 in older related fields, it seems apparent that a relatively short time has 

 elapsed since the invention of the first point-contact transistor. Already, 

 new properties and new tj'^pes of devices are under study and some have 

 been achieved in the laboratory. It therefore is possible, and certainly 

 stimulating, to infer that more than a single new component is involved; 

 that much more lies ahead than in the past; that, indeed we may be 

 entering a new field of technology, i.e., "transistor electronics". 



ACKNOWLEDGMENTS 



It was stated earlier that these advances in the development of tran- 

 sistors have resulted from improved understanding, materials and proces- 

 ses. These improvements have been made through the efforts of a large 



