TRAX.S1S1\)KS I\ SWITCIII.VG CIUCUITS 



1241 



EMITTER CURRENT, If, IN MILLIAMPERES 

 1 2 3 4 5 



>-15 



5-; 



Fig. 20 — Experimental aud calculated emitter negative resistance characteristic. 



lines, the method will yield fine detail to the degree to which device 

 parameters are known and patience will permit. Transient behavior and 

 analysis have not been discussed and are needed for a more complete 

 understanding, particularly where transitional speeds are of concern.* 



Ill — SwiTCHixG Type Transistor Properties 



An examination of the circuit approximations given in Figs. 17, 18, 

 and 19 will reveal that the transistor and circuit designers will want to 

 know nearly all there is to know about the device characteristics. This 

 is not particularly surprising since the device is used over its entire range 

 rather than over a limited portion as in the case of small-signal applica- 

 tions. The same examination of the circuit relations will also show tjiat 



* A treatment of the transient behavior between regions is given in B. O. Farley, 

 "Dynamics of Transistor Negative Resistance", Proc. Inst. Radio Erigr., Nov., 

 1952. Analysis and the solution for the periods of the monostable and astable 

 cases, a.ssuming infinite region to region transition speed, are given in G. E. Mc- 

 Dufhe, Jr., "Pulse Duration and Repetition Rate of a Transistor Multivibrator", 

 Proc. Inst. Radio Engr., Nov., 1952. 



