Index to Volume XXIX 

 A 



Amj)lifier. A New Microwave Triode: Its Performance as a Modulator and an Amplifier, 

 .1. E. Binveii and W. W. Mioiiford, page 531. 



B 



Bardeen, J., Theory of Relation between Hole Concentration and Characteristics of Ger- 

 manium Point Contacts, page 469. 



Bowen, A. E. and W. W . Mumford, A New Microwave Triode: Its Performance as a Modu- 

 lator and as an Amplifier, page 531. 



Bozorth, R. M., Factors Affecting Magnetic Quality, page 251. 



Codes, Error Detecting and Error Correcting, R. W. Hamming, page 147. 



Communication in the Presence of Noise — Probaljility of Error for Two Encoding Schemes, 

 5. O. Rice, page 60. 



Contacts, Germanium Point, Theory of Relation between Hole Concentration and Char- 

 acteristics of, /. Bardeen, page 469. 



Crossarms, Wood, Conversion of Concentrated Loads on to Loads Distributed at Each 

 Pin Position, R. C. Eggleston, page 105. 



Crystals, Optical Properties and the Electro-optic and Photoelastic Effects in. Expressed 

 in Tensor Form, IF. P. Mason, page 161. 



D 



Darlington, Sidney, Realization of a Constant Phase Difference, page 94. 

 Design Factors of the Bell Telephone Laboratories 1553 Triode, J. A. Morion and R. M. 

 Ryder, page 496. 



Eggleston, R. C, Conversion of Concentrated Loads on Wood Crossarms to Loads Distri- 

 buted at Each Pin Position, page 105. 



Electrons and Holes in Germanium and Other Semiconductors, Theory of the Flow of, 

 IF. van Roosbroeck, page 560. 



Electro-optic and Photoelastic Effects in Crystals Expressed in Tensor Form, Optical 

 Properties and the, IF. P. Mason, page 161. 



Error for Two Encoding Schemes, Probability of — Communication in the Presence of 

 Noise, 5. 0. Rice, page 60. 



Error Detecting and Error Correcting Codes, R. W. Hamming, page 147. 



Exchange, Telephone, Memory Requirements in a, C. E. Shannon, page 343. 



Flow of Electrons and Holes in Germanium and Other Semiconductors, Thcor\- of the. 



W. van Roosbroeck, page 560. 

 Fluctuations Arising from Diffusional Mechanisms, The Linear Theory of — .\n Allemj)t 



at a Theory of Contact Noise, ./. .1/. Richardson, page 117. 



G 



Germanium and Other Semiconductors, Theory of the Flow of Electrons and Holes in, 

 \V. van Roosbroeck, page 560. 



Germanium Point Contacts, Theory of Relation between Hole Concentration ami Charac- 

 teristics of, /. Bardeen, page 469. 



V 



