FLOW OF ELECTRONS AND HOLES IN GERMANIUM 



581 



field-aiding solution, which is consistent with the qualitative geometry 

 associated with a saddle-point, and with the fact that, in the X-region, a 



SLOPE =y(VC2 + 4 + c) 

 ^C FOR C LARGE 



SOLUTION CURVES 



BOUNDARY CONDITION CURVES 



ZERO CURRENT, 

 .C=0 



(r:_ HOLE CURRENT ' \ 

 V TOTAL CURRENT/ 



REDUCED HOLE CONCENTRATION, P 

 Fig. 1. — Diagrammatic representation in the (P, G)-plane of solutions and boundary 

 conditions for the steady-state one-dimensional flow of hjles in an »-type semiconductor. 



total current directed away from one source is necessarily directed to- 

 wards the Other. This behavior is illustrated diagramatically for the n- 

 type semiconductor in Fig. 1, which shows, in the (P, G) -plane, solution 



