276 BELL SYSTEM TECHNICAL JOURNAL 



to describe all of this work, some of which has been reported on in other 

 publications^ 



In a device as new as the transistor, various problems remain to be solved. 

 A reduction in noise and an increase in the frequency limit are desirable 

 While much progress has been made toward making units with reproducible 

 characteristics, further improvement in this regard is also desirable. 



It is apparent from reading this article that we have received a large 

 amount of aid and assistance from other members of the Laboratories staff, 

 for which we are grateful. We particularly wish to acknowledge our 

 debt to Ralph Bown, Director of Research, who has given us a great deal of 

 encouragement and aid from the inception of the work and to William 

 Shockley, who has made numerous suggestions which have aided in clarify- 

 ing the phenomena involved. 



References 



1. J. Bardeen and W. H. Brattain, Phys. Rev., 74, 230 (1948). 



2. W. H. Brattain and J. Bardeen, Phys. Rev., 74, 231 (1948). 



3. W. Shockley and G. L. Pearson, Phys. Rev., 74, 232 (1948). 



4. This paper was presented in part at the Chicago meeting of the American Physical 



Society, Nov. 26, 27, 1948. W. Shockley and the authors presented a paper on 

 "The Electronic Theory of the Transistor" at the Berkeley meeting of the National 

 Academy of Sciences, Nov. 15-17, 1948. A talk was given by one of the authors 

 (W. H. B.) at the National Electronics Conference at Chicago, Nov. 4, 1948. 

 A number of talks have been given at local meetings by J. A. Becker and other 

 members of the Bell Laboratories Staff, as well as by the authors. 



5. Properties and characteristics of the transistor are given by J. A. Becker and J. N. 



Shive in Elec. Eng. 68, 215 (1949). A coaxial form of transistor is described by 

 W. E. Kock and R. L. Wallace, Jr. in Elec. Eng. 68, 222 (1949). See also "The 

 Transistor, A Crystal Triode," D. G. F. and F. H. R., Electronics, September 

 (1948) and a series of articles by S. Young White in Audio Eng., .\ugust through 

 December, (1948). 



6. H. C. Torrey and C. A. Whitmer, Crvstal Rectifiers, McGraw-Hill, New York (1948). 



7. J. H. ScafT and R. S. Ohl, Bell Svstem Tech. Jour. 26, 1 (1947). 



8. W. E. Meyerhof, Phvs. Rev., 71, 727 (1947). 



9. J. Bardeen, Phys. Rev., 71, 717 (1947). 



10. W. H. Brattain and W. Shockley, Phys. Rev., 72, p. 345(L) (1947). 



11. W. H. Brattain, Phys. Rev., 72, 345(L) (1947). 



12. R. B. Gibney, formerly of Bell Telephone Laboratories, now at Los .\lamos Scientific 



Laboratory, worked on chemical problems for the semi-conductor group, and the 

 authors are grateful to him for a number of valuable ideas and for considerable 

 assistance. 



13. J. H. Scafif and H. C. Theuerer "Preparation of High Back Voltage Germanium 



Rectifiers" NDRC 14-555, Oct. 24, 1945^See reference 6, Chap. 12. 



14. The surface treatment is described in reference 6, p. 369. 



15. The transistor whose characteristics are given in Fig. 3 is one of an experimented pilot 



production which is under the general direction of J. A. Morton. 



16. See, for example, A. H. Wilson Semi-Conductors and Metals, Cambridge University 



Press, London (1939) or F. Seitz, The Modern Theory of Solids, McGraw-Hill Book 

 Co., Inc., New York, N.Y., (1940), Sec. 68. 



17. The nature of the barrier is discussed in Sec. IV. 



18. W. Schottky and E. Spenke, Wiss. Verof. Siemens-Werke, 18, 225 (1939). 



19. J. N. Shive, Phys. Rev. 75, 689 (1949). 



20. J. R. Haynes, and W. Shockley, Phvs. Rev. 75, 691 (1949). 



21. R. Bray, K. Lark-Horovitz and R. N. Smith, Phys. Rev.. 72, 530 (1948). 



22. R. Bray, Phys. Rev., 74, 1218 (1948). 



23. E. J. Ryder and W. Shockley, Phys. Rev. 75, 310 (1949). 



