M}(} liKJ.L .sy.STKM J'KCHAJCALJOURXAL 



Acknowledgments 



We have been aided and encouraged in these experiments by many of 

 our colleagues in the Research and Ai)paratus Development Dej)artments. 

 We are particularly indebted to W. H. Brattain and H. R. Moore for help 

 with experimental problems, to J. Bardeen and W. van Roosbroeck for 

 assistance with the theory and to P. W. Foy and W. C. Westphal for their 

 many contributions in connection with fabricating and measuring the fila- 

 ments. 



References 



1. J. Bardeen and VV. H. Brattain, Pliys. Rev., 74, 230 (1948). 



2. W. H. Brattain and J. Bardeen, Pliys. Rev., 74, 231 (1948). 



3. J. Bardeen and W. H. Brattain, Pliys. Rev., 75, 1208 (1949). 



4. VV. Shocklev, Bell Svsl. Tech. J., July (1949). 



5. J. N. Shive, Pkvs. Rev., 75, 689 (1949). 



6. W. E. Kock and R. L. Wallace, Electrical Engineering, 68, 222 (1949). 



7. E. J. Ryder and W. Shocklev, Phys. Rev., 75, 310 (1949). 



8. For reviews of the type-A transistor see reference 3, R. M. Ryder, Bell Laboratories 



Record, Mar. 1949, J. A. Becker and J. N. Shive, Electrical Engineering, 68, 215 

 (1949) and R. M. Rvder, Bell Svst. Tech. J., Julv (1949). 



9. H. Suhl and VV. Shocklev, Phys. Rev., 75, 1617 (1949), 76, 180 (1949). 



10. Experiments of this sort were first reported bv J. R. Haynes and VV. Shockley, Phys. 



Rev., 75, 691 (1949). 



11. VV. Shockley and G. L. Pearson, Phys. Rev., 74, 232 (1948). 



12. John Bardeen, Bell Svst. Tech. J., Julv (1949). 



13. G. L. Pearson, Phys. Rev., 76, 179 (1949). 



14. Transistors using /'-type germanium have been described by VV. G. Pfann and J. H. 



Scaff, Phys. Rev., 76, 459 (1949). Electron injection in p-iype germanium has 

 also been observed bv R. Brav, Phys. Rev., 76. 458 (1949) and Phvs. Rev., 76, 152 

 1949. 



15. G. VVannier, Pliys. Rev., 52, 191 (1937). 



16. Personal communication; a somewhat similar case is treated bv B. Goodman, A. VV. 



Lawson and L. I. Schiff, Ph\'s. Rev., 71, 191 (1947). 



17. C. Herring, Bell Syst. Tech. J., July (1949). 



18. Transistors of this type, employing p-n junctions as well as point contacts as emitters, 



have been discussed by VV. Shocklev, G. L. Pearson, M. Sparks, and W. H. Brattain, 

 Phys. Rev., 76, 459 (1949). 



19. Optical constants for germanium have been published by VV. H. Brattain and H. B. 



Briggs, Phys. Rev., 75. 1705 (1949). The integration over the radiation distribution 

 was carried cut b\' VV. van Roosbroeck. 



