468 



BFJ.I. SYSTEM TKCIIXICAL JOCRXAL 



5. InTKKXAL CoMAl I I'lMI.MlAI.S 



The theory of p-ii junctions presented above has interesting consequences 

 when applied to the distribution of potential between two semiconductors 





t 



i 



53- 



(b) 



(c) 



HORIZONTAL DISTANCE THROUGH SAMPLE, X- 



J2 



VERTICAL DISTANCE THROUGH SAMPLE , L) • 



Fip: 9 — Internal contact jjotcntials showing how presence of iniecled 

 contact potential across /j. 



holes jiroduces a 



under conditions of hole or electron injection. In Fig. 9 we illustrate an 

 X-shaped structure. A forward current llows across the junction Pi and 

 out of branch .Vi . If the distance across the intersection is com{)arable with 

 or small compared to the diffusion length for holes, a potential difference 

 should l)e measured between A and A'l; . The reason for this is that holes 



