p-n JUNCTIONS IN SEMICONDUCTORS 487 



APPENDIX VIII 



List of Symbols 



(Numbers in parentheses refer to equations) 



a = {Nd - Na)/x (2.14) 



A = admittance per unit area of junction (4.23) 



Ap = component of A due to hole flow into ^-region (4.12) (4.24) 



An = component of A due to electron flow into />-region (4.25) 



.1 T = component of A due to varying charge distribution in transition 



region 

 A also used as a constant coefficient in various appendices 

 b = ratio of electron mobility to hole mobility 

 b = symbol for base in Sections 5 and 6 

 B constant coefficient in various expansions in appendices 

 c = symbol for collector in Section 6; a length in Appendix III 

 C = capacity per unit area 

 C„ , Cp (4.25) (4.27) as for ^„ , ^p 

 Cr (2.42) (2.45) (2.56) as ior At 



D = diffusion constant for holes {bD is the diffusion constant for electrons) 

 e = 2.718... 

 / see Appendix 7 



g — rate of generation of hole-electron pairs per unit volume (3.1) 

 G = conductance per unit area of junction 

 Gn , Gp as for /I's 

 i = V^ 



/ = current density 



In , Ip = current densities due to electrons and holes (2.5) (2.6) (4.10) 

 /no,/po /pi (4.11) (4.12) (4.18) (4.19) 



Is , Ins , Ips saturation reverse current densities (4.11) (4.18) (4.21) 

 /r see text with (4.35) 



/ = subscript in Section 3 for junction Fig. 5 equation (3.11) 

 k = Boltzmann's constant 

 K = space charge parameter (2.17) 

 L — length 

 I-a = nil a (2.15) 

 Lo = Debye length (2.12) 



Ln ,Lp= diffusion lengths for electron in /^-region and holes in «-region (4.8) 

 Lr = length required for potential increase of kT/q in region of constant 



field (4.32) Appendices II and IV 

 Li corresponds to a-c. field, Appendbc IV 

 n — density of electrons 



