PROPERTIES AND APPLICATIONS OF fl-p-H TRANSISTORS 563 



Acknowledgment 



The authors are happy to acknowledge their indebtedness to W. Shockley 

 who was first to conceive the n-p-n transistor and has provided much of the 

 inspiration and guidance which has made its physical realization possible. 

 His comments have been of great help in the preparation of this paper. 



We are also much indebted to J. A. Morton for his encouragement and 

 helpful guidance and to M. Sparks for providing most of the transistors 

 which have been studied. We wish to thank L. O. Schott, L. C. Geiger, and 

 K. D. Smith for taking some of the data presented and to thank G. Raisbeck 

 and L. G. Schimpf for proofreading and correcting the manuscript. 



References 



1. W. Shockley, "The Theory of p-n Junctions in Semiconductors and p-n Junction 



Transistors," B. S. T. /, XXVIII, 435 (1949). 



2. W. Shockley, ''Electrons and Holes in Semiconductors," Van Nostrand (1950). 



3. F. S. Goucher, G. L. Pearson, M. Sparks, G. K. Teal, W. Shockley, "Theory and 



Experiment for a Germanium p-n Junction," PItys. Rev., 81, 637 (1951). 



4. W. Shockley, M. Sparks, G. K. Teal, "p-n Transistors," Phys. Rev., 83, 151 (1951). 



5. R. M. Ryder, R. J. Kircher, "Some Circuit Aspects of the Transistor," B. S. T. /., 



XXVIII, 367 (1949). 



