ABSTRACTS OF TECHNICAL ARTICLES 1253 



Drift mobility of the electrons is obtained by measurement of their velocity 

 in known electric fields. The value obtained for the Hall mobility (Ra) 

 multiplied by S/Stt is 51 cmVvolt sec at 25°C. The values obtained for the 

 drift mobility are shown to be a function of temperature. A value of 49.5 

 cmVvolt sec was obtained at 25°C, which is within experimental error of 

 (8/37r)R(7, indicating that acoustical scattering is the principal mechanism 

 and that temporary trapping is unimportant. A summary of the behavior 

 of conduction electrons in silver chloride, calculated from the results of these 

 experiments, is included. 



p-n Junction Transistors * W. Shockley^ M. Sparks^, and G. K. Teal^ 

 References. Phys. Rev, v. 83, pp. 151-162, July 1, 1951. 



Abstract — The effects of diffusion of electrons through a thin p-type 

 layer of germanium have been studied in specimens consisting of two n-type 

 regions with the p-type region interposed. It is found that potentials applied 

 to one n-type region are transmitted by diffusing electrons through the p-type 

 layer although the latter is grounded through an ohmic contact. When one 

 of the p-n junctions is biased to saturation, power gain can be obtained 

 through the device. Used as "n-p-n transistors" these units will operate on 

 currents as low as 10 microamperes and voltages as low as 0.1 volt, have 

 power gains of 50 db, and noise figures of about 10 db at 1000 cps. Their 

 current-voltage characteristics are in good agreement with the diffusion 

 theory. 



* A reprint of this article may be obtained on request. 

 1 Bell Tel. Labs. 



