DC FIELD IN A *WePT INTRINSIC" SEMICONDUCTOR 



675 



10-3 

 8 



II 2 



^^ 10-4 



0.2 



0.3 



0.5 



y/L=y/L 

 Fig. 3 — (Potential at point in intrinsic layer/Potential of n-intrinsic junction) 

 versus (Distance from n-intrinsic junction/Intrinsic layer thickness) for L = 

 (Intrinsic layer thickness/Mean Debye length) = 4,000 and several values of 

 U = (Potential of n-intrinsic junction/Boltzmann voltage). 



