774 the bell system technical journal, may 1953 



Smith, K. D.* 

 Properties of Junction Transistors, Tele-Tech, 12, pp. 76-78, Jan., 

 1953. 



TOWNSEND, J. R.^ 



What We Have Learned in 1952, Standardization, 24, pp. 16-18, 

 Jan., 1953. 



ToWNSEND, J. R.^ 



What We Have Learned in 1952, A Report to the Joint Meeting of 

 Standards Council and Board of Directors of ASA, A.S.T.M. Bull., 

 No. 187, pp. 22-23, Jan., 1953. 



Van Roosbroeck, W.^ 

 Large Current Amplifications in Filamentary Transistors, Letter to 

 the Editor, J. Appl. Phys., 23, pp. 1411-1412, Dec, 1952. 



Wallace, R. L., Jr.,^ L. G. Schimpf^ and E. Dickten^ 



High-Frequency Transistor Tetrode, Electronics, 26, pp. 112-113, 

 Jan., 1953. 



Sine-wave oscillators at frequencies up to 130 mc and tuned amplifiers with 

 substantial gain at frequencies of 50 mc or higher are obtained by using 

 junction transistors with an added connection to the base electrode biased 

 negative at six volts. 



1 Bell Telephone Laboratories, Inc. 

 ' Sandia Corporation. 



