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ABSTRACTS OF TECHNICAL ARTICLES 1009 



Single crystals of a number of iron-nickel alloys were prepared, and measure- 

 ments made of the magnetic crystal anisotropy, and of the magnetostriction 

 at saturation in different crystallographic directions, as dependent on the rate 

 of cooling of the specimens after anneaUng. There is a large effect of the cool- 

 ing rate on the anisotropy, for compositions near FeNia, where atomic ordering 

 occurs. There is a definite but smaller effect of coohng rate on the magneto- 

 striction. The composition for highest initial and maximum permeabilities is 

 nearly that for which Mil, the magnetostriction in the direction of easy 

 magnetization, is equal to zero. 



Dalton, a. G.^ 



Practice of Quality Control, Sci. Am., 188, pp. 29-33, Mar., 1953. 



Statistical analysis of manufacturing processes has become a powerful tool of 

 technology. An account of how its principles are now apphed in the factory. 



Drvostep, J. J.,^ AND A. W. Lebert^ 



Standardization of Rigid Coaxial Transmission Lines, Tele-Tech, 

 12, pp. 78-79, Feb., 1953 (Monograph 2077). 



Dehn, J. W., see R. W. Burns. 



Felker, J. H.^ 



Arithmetic Processes for Digital Computers, Electronics, 26, pp. 150- 

 155, Mar., 1953 (Monograph 2078). 



Special codes and arithmetical processes enable digital computers to perform 

 rapidly many heretofore laborious mathematical tasks. Review of these 

 processes serves as introduction to newcomers to field and review for veteran 

 computer engineers. 



GoucHER, F. S.,^ AND M. B. Prince^ 



Interpretation of a-values in p-n Junction Transistors, Phys. Rev., 

 89, pp. 651-653, Feb. 1, 1953 (Monograph 2068). 



By the measurement of five parameters in several p-n junction transistors, 

 viz., the conductivities and diffusion lengths of minority carriers in the emitter 

 and base regions and the widths of the base regions, the current amplification 

 factor a of the transistors has been computed from theory. Previous to this 

 investigation two of the parameters associated with the thin p-layer had not 

 been measured. The quantity a also was obtained independently by two 

 alternate methods: (1) by measuring the collector-emitter current charac- 

 teristic, and (2) by measuring the apparent quantum efficiency of the transis- 

 tor as a two-electrode photocell with a floating base. The three determined 

 values of a for each sample agree within the experimental error. 



1 Bell Telephone Laboratories, Inc. 

 3 Western Electric Company. 



