ABSTRACTS OF TECHNICAL ARTICLES 1511 



Mertz, P/ 



Influence of Echoes on Television Transmission, J.S.M.P.T.E., 



60, pp. 572-596, May, 1953 (Monograph 2144). 



Peterson, G. E.^ 



Basic Physical Systems for Communication Between Two Individuals, 

 J. Speech and Hearing Disorders, 18, pp. 116-120, June, 1953 (Mono- 

 graph 2135). 



Pierce, J. R.^ 



Transistors, Radio-Electronics, 24, pp. 42Ht4, June, 1953. 



PoRTis, A. M.,^ A. F. Kip,^ C. KiTTEL,^ AND W. H. Brattain^ 



Electron Spin Resonance in a Silicon Semi-Conductor, Letter to the 

 Editor, Phys. Rev., 90, pp. 988-989, June 1, 1953. 



Prim, R. C, see W. Shockley. 



QUARLES, D. A.^ 



Progress and Problems, Elec. Eng., 72, pp. 667-669, August, 1953. 



QUARLES, D. A.^ 



Report to the Membership, Elec. Eng., 72, pp. 477-479, June, 1953. 



Read, W. T., see J. D. Eshelby. 



Ryder, E. J.^ 



MobiUty of Holes and Electrons in High Electric Fields, Phys. Rev., 

 90, pp. 766-769, June 1, 1953. 



The field dependence of mobility has been determined for electrons and holes 

 in both germanium and siUcon. The observed critical field at 298 degrees K 

 beyond which /x varies as E~^'^ is 900 volts/cm for n-type germanium, 1400 

 volts /cm for p-type germanium, 2500 volts /cm for n-type siUcon, and 7500 

 volts/cm for ??-type siUcon. These values of critical field are between two to 

 four times those calculated on the basis of spherical constant energy surfaces 

 in the Brillouin zone. A saturation drift velocity of 6(10)^ cm/sec is observed 

 in germanium which is in good agreement with predictions based on scattering 



1 Bell Telephone Laboratories, Inc. 



^ Sandia Corporation. 



7 University of Cahfornia, Berkeley. 



