22 THE BELL SYSTEM TECHNICAL JOURNAL, JANUARY 1956 



analysis in a fashion similar to that which has been applied to other junc- 

 tion transistors. The non-uniform distribution of impurities produces 

 significant electrical effects which can be controlled to enhance appre- 

 cial)ly the high-frequency behavior of the devices. 



The extreme control inherent in the use of diffusion to distribute im- 

 purities in a semiconductor structure suggests that this technique will 

 become one of the most valuable in the fabrication of semiconductor 

 devices. 



ACKNOWLEDGEMENT 



The authors are indebted to several people who contributed to the 

 work described in this paper. In particular, the double diffused silicon 

 from which the transistors were prepared was supplied by C. S. Fuller 

 and J. A. Ditzenberger. The data on diffusion coefficients and concen- 

 trations were also obtained by them. 



P. W. Foy and G. Kaminsky assisted in the fabrication and mounting 

 of the transistors and J. M. Klein aided in the electrical characterization. 

 The computations of the various solutions of the diffusion equation, (4.3), 

 were performed by Francis Maier. In addition many valuable discussions 

 with C. A. Lee, G. Weinreich, J. L. Moll, and G. C. Dacey helped formu- 

 late many of the ideas presented herein. 



