ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON 



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TEMPERATURE IN DEGREES CENTIGRADE 



Fig. 3 — Temperature variation of the saturation current of a barrier between 

 5.5 ohm-cm n-type germanium and 10 per cent KOH solution. 



illuminated condition were obtained by shining light on a dry face of a 

 slice while the barriers were on the other face. The difference between 

 the light and dark currents is larger for the electrolyte-germanium bar- 

 rier than for the metal-germanium barrier, by a factor of about 1.4. 



The transport of holes through the slice is probably not very different 

 for the two barriers. Therefore, a current multiplication of 1.4 is indi- 

 cated for the electrolyte barrier. About the same value was found for 

 temperatures from 15°C to 60°C, KOH concentrations from 0.01 per 

 cent to 10 per cent, n-type resistivities of 0.2 ohm-cm to 6 ohm-cm, 

 light currents of 0.1 to 1.0 ma/cm^, and for O.IN indium sulfate. 



Evidently the flow of holes to the electrolyte barrier is accompanied 

 by a proportionate return flow of electrons, which constitutes an addi- 

 tional electric current. Possible mechanisms for the creation of the 

 electrons will be discussed in a forthcoming article. 



