ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON 



339 



electrolyte-germanium barrier after various amounts of material had 

 been removed by chemical etching. After 20 to 50 microns had been re- 

 moved, further chemical etching produced no change in the barrier 

 characteristic. This amount of material had to be removed even if the 

 lapping was followed by polishing to a mirror finish. The voltage-current 

 curve of the electrolyte-germanium barrier will reveal localized damage. 

 On the other hand, the photomagnetoelectric (PME) measurement of 



<rri> 



(a) 



ELECTROPLATED 

 INDIUM 



METAL TO N-Ge 

 CONTACT 



ELECTROLYTE TO 

 N-Ge BARRIER 



(c) 



2 4 6 



CURRENT, I, IN MILLIAMPERES 



PER CM 2 



Fig. 5 — Determination of the current multiplication of the barrier between 

 6 ohm-cm n-type germanium and an electrolyte. 



