630 THE BELL SYSTEM TECHNICAL JOURNAL, MAY 1956 



out and S^ after all the donor has been diffused out. With these defini- 

 tions (E16) becomes 



./..., ?-^ (^^-N^,) V. (-) = 



Calling the slope of this curve S leads to the result 



I 



or using (E14) and (E15) 



) 



D = ( _^^iAZ£_ ) (E19) 



This is equivalent to equation (11.12). 



Glossary of Symbols 



a distance of closest approach of two ions of opposite sign 



A constant in expression for p in section on relaxation theory,' 



A~ concentration of ionized acceptors 



^0 Ar, going with t? = 



Ai Ar, going with rji 



Aj, constant preceding the Tjth eigenfunction in solution of the! 



relaxation problem 



A, coefficient of sin sx in Fourier expression for No 



h q^/2KkT, position of minimum in g(r) 



B constant in expression for p in section on relaxation theory 



B~ boron ion \ 



B(Si) un-ionized boron in silicon ; 



Bs coefficient of cos sx in Fourier expression for No 



c(r) concentration of positive ions in atmosphere of a negative 



ion 



C concentration of LiB~ 



d thickness of wafer in diffusion experiment 



D diffusivity of donor ion in the most general sense 



Do diffusivity of donor ion m the absence of pairing 



D"*" concentration of ionized donors 



Do"*" value of D^ in the absence of acceptor 



D*^ concentration of mobile donor ions where V = 



e~ conduction band electron 



valence band hole 



.+ 



