CHEMICAL INTERACTIONS AMONG DEFECTS IN Ge AND Si 631 



, e^e" recombined hole-electron pair 



E energy level in electron gas 



Ed ionization energy of a donor 



I Ea ionization energy of an acceptor 



Ei energy level in conduction band 



j E{r) chance that volume 47rr /3 will not contain an ion 



I / flux density 



t F Fermi level — also constant in equation (7.21) 



! Qi density of states of energy Ei in conduction band 



' g{r) nearest neighbor distribution function at equilibrium 



I G Gibbs free energy of electron assembly 



GaT gallium ion in germanium 



(?„ space dependent part of relaxation eigenfunction 



; Go G, for 77 = 



Gi Gr, for r? = 171 



h Plank's constant — also used for normalizing constant in 



c(r) 



hj number of holes in the jth energy level 



H net local density of fixed donors 



i{p2 , pi) £^/(r2 , n) 



I field current in diffusion measurement 



I(r2 , ri) integral for ion pairing calculations taken between ri and rz 



J(r) current in the atmosphere of a nearest neighbor 



J* flux density of ions being trapped 



k Boltzmann's constant 



fci first order rate constant in relaxation theory 



^2 second order rate constant in relaxation theory 



Ko distribution coefficient of donor between semiconductor and 



external phase 



Ki electron-hole recombination equilibrium constant 



Ka ionization constant of acceptor 



Kd ionization constant of donor 



Kj constant relating wy to volume, V 



K* product oi Kd , Ko, and a 



I screening length for diffusion potential 



L Debye length — also used for radius of volume, 1/A^ 



Li^ lithium ion 



Li(Sn) lithium in molten tin 



Li{Si) un-ionized lithium in silicon 



LiSi lithium-silicon complex 



LiB un-ionized LiB~ 



