632 THE BELL SYSTEM TECHNICAL JOURNAL, MAY 1956 



IAB~ lithium-boron complex ion in semiconductor 



[Li^BT] lithium-boron ion pair 



[Li^GaT] lithium-gallium ion pair 



mo normal mass of electron 



mp effective mass of a hole 



M normalizing constant in relaxation theory 



n concentration of conduction electrons — also used for density 



of untrapped ions in relaxation 



rii intrinsic concentration of electrons 



N A total acceptor concentration 



Nd total donor concentration 



Nd total solubility of donor in undoped semiconductor — also used 



for initial density of donors in diffusion experiments 



N ion concentration in an electrolyte solution — also used for initial 



value of n in relaxation — also used for concentration of im- 

 mobile donors in Appendix A 



Nd* solubility of donor in absence of ion pairing in Appendix A 



p concentration of holes 



P concentration of ion pairs 



q charge on an ion 



Q{a) tabulated integral for computing 9, 



r distance between positive and negative ions in a pair 



ri a particular value of r 



rt a particular value of r 



R capture radius of an ion in relaxation 



S slope of 2/So versus -\/f curve 



S^ time dependent part of relaxation eigenfunction belonging 



to eigenvalue t] 



t time 



T temperature 



u V -Vo 



V electrostatic potential — also used for volume — also used 



for potential difference between probe points — also used for] 

 potential energy of a positive in neighborhood of negative 

 ion 



Vo electrostatic potential where x = Xq 



X variable of integration - — same as r also rectangular position 



coordinate 



Xo special value of a:. 



1 





