CHEMICAL INTEEACTIONS AMONG DEFECTS IN Ge AND Si 633 



zja — also used for thermodynamic activity of donor in external 

 phase 



coefficient of sin sx in Fourier expression for u 

 constant in exponential in LiB~ equilibrium constant 

 constant in exponential in expression for vacancy concentra- 

 tion 



/3s for s = 



coefficient of cos 8X in fourier expression for u 

 pre-exponential factor in LiB~ equilibrium constant 

 pre-exponential factor in expression for vacancy concentra- 

 tion 



exp[-gFoAT] 



non-equilibrium nearest neighbor distribution function 

 constant appearing in Appendix C 



eigenvalue in relaxation problem 

 second eigenvalue in set of q 

 fraction of donor paired 

 correction factor for variable carrier mobility 

 dielectric constant 

 xje 



2ir/s, wavelength of sth component of fourier series 

 wavelength of component of fourier series for No , having 

 minimum wavelength 



chemical potential of donor in an external phase — also used 

 for mobility of donor ion — also used for local carrier mo- 

 bility 



chemical potential of donor in external phase in standard state 

 chemical potential of donor ion 

 chemical potential of donor ion in the standard state 

 chemical potential of an electron 

 chemical potential of donor atom in semiconductor 

 chemical potential of donor atom in standard state 

 mobility of donor atom at infinite dilution — also used for 

 carrier mobility in diffusion experiments before diffusion 

 carrier mobility in diffusion experiments after all diffusant 

 has diffused out 

 x/2VDt 

 e/r. 



LiBT equilibrium constant 

 resistivity of gallium-doped germanium after saturation with 



