TECHNICAL PAPERS 753 



Fehek, G./ Fletcher, R. C./ and Gere, E. A/ 



Exchange Effects in Spin Resonance of Impurity Atoms in Silicon, 

 Phys. Rev., Letter to the Editor, 100, pp. 1784-1785, Dec. 15, 1955. 



Feldmann, W. L., see Pearson, G. L. 



Fkaver, D. R.' 



Design Principles for Junction Transistor Audio Power Amplifiers, 

 l.R.E. Tran.s., AU-3, pp. 183-201, Nov.-Dec, 1955. 



Flaschen, S. S.,^ and Van Uitert, L. G.' 



New Low Contact Resistance Electrode, J. Appl. Phys., Letter to the 

 Editor, 27, p. 190, Feb., 195(5. 



Fletcher, R. C., see Feher, G. 



Fry, T. C.^ 

 Mathematics as a Profession Today in Industry, Am. ]\Iath. Monthly, 



63, pp. 71-80, Feb., 1956. 



Fuller, C. S., see Reiss, H. 



Geballe, T. H., see Hrotowski, H. J. 



Gere, E. A., see Feher, G. 



Germer, L. H.,^ and Boyle, W. S.^ 



Short Arcs, Nature, Letter to the Editor, 176, p. 1019, Nov. 26, 1955. 



Germer, L. H.,^ and Boyle, W. S.^ 



Two Distinct Types of Short Arcs, J. Appl. Phys., 27, pp. 32-39, Jan., 

 1956. 



GlANOLA, U. F. 



Photovoltaic Noise in Silicon Broad Area p-n Junctions, .1. Appl. 

 Phys., 27, pp. 51 53, Jan., 1950. 



GoRDY, W., see Burrus, C. A. 

 1 Bell Telephone Laboratories, Inc. 



