TECHNICAL PAPERS 755 



Matthias, B. T., see Holden, A. N. 

 Merz, W. J., see Holden, A. N. 



Miller, L. E. 



Negative Resistance Regions in the Collector Characteristics of the 

 Point-Contact Transistor, Proc. I.R.E., 44, pp. 65-72, Jan., 195G. 



Moll, J. L./ and Ross, I. M.' 



The Dependence of Transistor Parameters on the Distribution of 

 Base Layer Resistivity, rioc. I.R.E., 44, pp. 72-78, Jan., 1950. 



Montgomery, H. C, See Pearson, G. L. 



iMoRiN, F. J., see Hrotowski, H. J. 



MuMFORD, W. W.,^ and Schaferman, R. L/ 



Data on the Temperature Dependence of X-Band Fluorescent Lamp 

 Noise Sources, I.R.E. Trans., MTT-3, pp. 12-16, Dec, 1955. 



Xesbitt, E. a., see Williams, H. J. 



( )lmstead, p. S.^ 



QC Concepts Useful in OR, lud. Qual. Cent., 12, pp. 11, 14-17, Oct., 

 1955. 



< )WENS, C. D.' 



Stability Characteristics of Molybdenum Permalloy Powder Cores, 

 Elec. Engg., 74, pp. 252-256, Feb., 1956. 



Pearson, G. L.,^ Montgomery, H. C.,^ and Feldmann, W. L.^ 



Noise in Silicon p-n Junction Photocells, J. Appl. Phys., 27, pp. 91-92, 

 Jan., 1956. 



Pfann, W. G.,^ and Hagelbarger, D. W.^ 



Electromagnetic Suspension of a Molten Zone, J. Appl. Phys., 27, 

 pp. 12-17, Jan., 1956. 



' Bell Telephone Laboratories, Inc. 



