POINT-CONTACT TRANSISTOR SURFACE EFFECTS 



775 



2.0 



1.0 

 0.8 



0.6 

 0.5 



0.4 

 0.3 



0.2 



0.02 



0.01 

 0.008 



0.006 

 0.005 



0.004 

 0.003 



0.002 



0.001 



O.l 



0.2 0.3 0.4 0.6 0.8 1.0 2 3 4 5 6 8 10 



r IN MILS 



20 



Fig. 2 — Comparison of floating potentials near formed points. 



by pI/2Trr where p is Avell A\ithiii the range of the measured resistivity 

 (3-4 ohm-cm). 



Thus the effect of adding the donor to the point wire is to increase 

 the reverse current and increase the floating potential near the point by 

 an order of magnitude. One would therefore expect an accompanying 



