POINT-CONTACT TRANSISTOR SURFACE EFFECTS 811 



KEFERENCES 



1. J. Bardeen and W. H. Brattain, Physical Principles Involved in Transistor 



action, Phvs. Rev. 75, p. 1213, April 15, 1949. 



2. J. Bardeen and W. G. Pfann, Effects of Electrical Forming on the Rectifying 



Barriers of n- and p-Germanium Transistors, Phys. Rev. 77, p. 401-402, 

 Feb. 1, 1950. 



3. W. Shockley, Electrons and Holes in Semiconductors, D. VanNostrand Com- 



pany, New York, N. Y., p. 110. 



4. Reference 3, p. 111. 



5. L. B. Valdes, Transistor Forming Effects in n-Type Germanium, Proc. I.R.E. 



40, p. 446, April, 1952. 



6. W. Shocklev, Iheoiies of High Values of Alpha for Collector Contacts on 



Geimanium, Phys. Rev. 78, p. 294-295, May 1, 1950. 



7. W. R. Sittner, Current Midti] licalion in the Type A Transistor, Proc. I.R.E. , 



40, pp. 448-454, April, 1952. 



8. Valdes (Reference 5j reports large concentrations of copper present in the 



p-germanium under heavily formed phosphor-bronze points. 



9. W. G. Pfann, Significance of Composition of Contact Point in Rectifjing 



Junctions on Germanium, Phys. Rev. 81, p. 882, March 1, 1951. 



10. C. S. Fuller and J. D. Struthers, Copper as an Acceptor Element in Germa- 



nium, Phys. Rev. 87, p. 526, Aug. 1, 1952. 



11. C. S. Fuller, Diffusion of Acceptor and Donor Elements into Germanium, 



Phys. Rev. 86, p. 136, April 1, 1952. 



12. Reference 5, p. 448. 



13. Personal communication, H. E. Corey, Jr. 



14. L. E. Miller, Negative Re.sistance Regions in the Collector Characteristics of 



Point Contact Transistors, Proc. I.R.E., 40, p. 65-72, Jan. 1, 1956. 



15. Reference 1, p. 1225. 



16. John Bardeen, Surface States and Rectification at a Metal Semiconductor 



Contact, Phys. Rev., 71, p. 717-727, May, 15, 1947. 



17. I. Tamm, iiber eine Mogliche Art der Elektronenbindung an Kristallober- 



flitchen, Physik, Zeits, Sowjetunion, 1, 1932, p. 733. 



18. W. H. Brattain and J. Bardeen, Surface Properties of Germanium, B. S. T. J. 



32, pp. 1-41, Jan., 1953. 



19. W. L. Brown, n-T}'pe Surface Conductivity on p-Tvpe Germanium. Phvs. 



Rev. 91, pp. 518-527, Aug. 1, 1953. 



20. W. H. Brattain and C. G. B. Garrett, private communication. 



21. R. D. Heidenreich, private communication. 



22. O. H. Johnson, Germanium and its Inorganic Compounds, Chem. Rev. 51, 



pp. 431-469, 1952. 



23. M. Kikurchi and T. Onishi, A Thermo-Electrical Study of the Electrical 



Forming of Germanium Rectifiers, J. App. Phys., 24, pp. 162-166, Feb., 1953. 



24. R. H. Kingston, Water-Vapor Induced n-Type Surface Conductivity on p- 



Type Germanium, Phys. Rev., 98, 1766-1775, June 15, 1955. 



25. M. V. Sullivan, personal communication. 



26. J. T. Law, A Mechanism for Water Induced Excess Reverse Current on Grown 

 Germanium n-p Junctions, Proc. I. R. E., 42, pp. 1367-1370, Sept., 1954. 



27. E. Billig, Effect of Minority Carriers on the Breakdown of Point Contact 

 ^ Rectifiers, Phys. Rev. 87, p. 1060, Sept. 15, 1952. 



28. G. W. Snedcor, Statistical Methods, The Iowa State College Press, Ames, 



Iowa, 1946. 



29. W. VanRoosbroeck, Design of Transistors with Large Current Amplification, 



J. App. Phys., 23, p. 1411, Dec, 1952. 



