Nobel Prize in Physics Awarded 

 to Transistor Inventors 



The Swedish Royal Academy of Sciences announced on November 1 

 that a Nobel Prize in Physics, most highly coveted award in the world 

 of physics, had been awarded jointly to Dr. Walter H. Brattain of the 

 Laboratories Physical Research Department, with Dr. John Bardeen 

 and Dr. William Shockley, both former members of the Laboratories. 

 The prize was awarded for ''investigations on semiconductors and the 

 discovery of the transistor effect." 



This marks the second time that Avork done at the Laboratories has 

 been recognized by a Nobel Prize. The previous recipient Avas Dr. C. J. 

 Davisson who shared in the 1937 prize for his discovery of electron dif- 

 fraction as a result of experiments carried out with Dr. L. H, Germer, 

 also of the Laboratories. 



Each of the three Avinners of this year's prize Avill receive a gold medal, 

 a diploma and a share of the $38,633 prize money. When he Avas notified 

 that he Avas one of these Avinners, Dr. Brattain said, "I certainly ap- 

 preciate the honor. It is a great satisfaction to have done something 

 in life and to haA^e been recognized for it in this Avay. HoAvever, much of 

 my good fortune comes from being in the right place, at the right time, 

 and having the right sort of people to Avork Avith." 



The principle of transistor action Avas discovered as a result of funda- 

 mental research directed toAA^ard gaining a better understanding of the 

 surface properties of semiconductors. Following World War II, intensiA^e 

 programs on the properties of germanium and silicon AA'ere undertaken 

 at the Laboratories under the direction of William Shockley and S. 0. 

 Morgan. One group in this program engaged in a study of the body 

 properties of semi-conductors, and another on the surface properties. 

 Dr. John Bardeen served as theoretical physicist and R. B. Gibney as 

 chemist for both groups. These iuA'estigations, Avhich resulted in the in- 

 \'ention of the transistor, made extensiA^e use of knoAvledge and tech- 

 niques developed by scientists here and elscAvhere, particularly by mem- 

 bers of the Laboratories — R. S. Ohl, J. H. Scaff and H. C. Theuerer. 



Since the transistor Avas announced, little more than eight years ago, 

 it has become increasingly important in Avhat has been called the "neAv 



