22 



THE BELL TELEPHONE SYSTEM TECHNICAL JOURNAL, 1956 



Rowe, H. E. 



frequency conversion 1416 



RUGGEDNESS 



Bell System standards 708 

 transistor 

 point-contact 768 

 Rulison, R. 

 rectifier 

 junction 

 p-n 

 silicon 

 development 684 



Saloom, Joseph A., Jr. 



biographical material 532 

 Saloom, J. A. 

 Detailed Analysis of Beam Formation 

 with Electron Guns of the Pierce Type 

 375-420 

 Saloom, J. A. 

 electron tube 

 traveling wave 

 M1789 1343 

 Sandsmark, P. I. 

 electron tube 

 traveling wave 

 M1789 1343 

 Sansalone, F. J. 

 isolator 

 field displacement 896 

 Sawyer, Baldwin 

 biographical material 764 

 Single Crystals of Exceptional Perfec- 

 tion and Uniformity by Zone Leveling 

 637-60 

 Scaff, J. H. 



semiconductor studies i 

 Scattaglia, J. V. 

 regenerator 

 pulse 

 binary 



transistor 1084 

 Scheideler, C. E. 

 amplifier 

 transistor 

 junction 



tetrode 840 



Schimpf, L. G. 

 biographical material 988 

 Design of Tetrode Transistor Amplifiers 

 813-40 

 Schramm, F. W. 

 testing 



automatic 1154 

 Seidel, Harold 



biographical material 988 

 Field Displacement Isolator 877-98 

 Selenium Rectifier See Rectifier 

 Semiconductor (s) , Semiconducting 

 Materials 

 aqueous solutions, analogy 537 

 impurities 



diffusion into 1-34 

 ions 

 pairing 

 phenomena 575-78 

 leveling, see Zone Leveling 

 Xobcl Prize in Physics, 1056 i-iv 

 regions 

 extrinsic 1239-84 

 intrinsic 1239-84 

 shaping 

 electrolytic 333-47 

 mechanical 333 

 structure 



swept intrinsic 

 theory 1239-84 

 surface 

 layers 



measurement 1209-21 

 traps 



cross sections 1041-58 

 distribution 1041-58 

 zone leveling, see Zone Leveling 

 See also Crj'stal; Diode; Junction 

 Semiconductor Rectifier See Recti- 

 fier 

 Series Resistance Rectifier See Rec- 

 tifier 

 Service IVIaintenance See Mainten- 

 ance 

 Shannon, C. E. 

 information rate 

 interpretation 926 

 Shaping 

 electrolytic 



