CONDUCTIVITY-MODULATED SILICON RECTIFIER 



979 



terial and a reverse bias of 100 volts is given in Table I as a function of 

 Vr . The numbers compare with 8 X 10"^° ampere per square centimeter 

 for /o . Thus, from diode measurements at room temperature and above, 

 one could not observe Vt less than 0.3 eV from either the conduction or 

 valence band. In fact, from a measurement of the temperature depend- 

 ence of the reverse currents, one can determine only the recombination 

 level lying closest to the center of the forbidden band. This can be seen 

 more clearly from the folloAving argument: There will be a contribution 

 to the reverse current from the diffusion current hmgiT) which varies 

 with temperature as g{T). There will be contributions to the reverse cur- 



105 

 5 



5 

 10^ 



> 



102 



10' 



10° 



10" 



2.2 



2.4 



2.6 



2.8 



1000 

 T°K 



3.0 



3.2 



3.4 



Fig. 1 — The temperature variation of the generation rsite,f{T, Vr), for several 

 values of the recombination level, Vr . 



