CONDUCTIVITY -MODULATED SILICON RECTIFIER 



981 



10' 



102 



If) 



Ml 



a. 



UJ 



a 

 5 

 < 



O 



a. 

 u 



5 



z 



10' 



10° 



10" 



10-2 



2.2 



2.4 



2.6 



2.8 

 1000 

 T" K 



3.0 



3.2 



3.4 



Fig. 2 — The temperature variation of "reverse current" for a typical diode 

 at -10, -40, and -160 volts. 



is given in Fig. 2. The slope of these curves indicates that the recombina- 

 tion level lies near 0.5 eV below the conduction band or above the val- 

 ence band. The junction area of this device is 0.015 cm^; thus, the cur- 

 rent density at 300° K and at - 100 volts is 4.4 microamperes per square 

 centimeter. This compares with the order of one microampere as listed 

 in Table I. This suggests that the (t„ot„o)' is overestimated. The agree- 

 ment of this measurement with theory is reasonable. 



The voltage variation of the reverse currents does not agree with 

 theory as well as the magnitude and temperature dependence. The ex- 

 perimental results give, as the voltage dependence, an expression: 



/, ~ V 



\IN 



where N equals 2.9. This compares with the theoretical value of N = 2. 



