CONDUCTIVITY-MODULATED SILICON RECTIFIER 



991 



rents of one microampere were made only at 300° K. Currents above 10 

 milliamperes were not measured since internal power losses would cause 

 temperature variations. The unit has a junction area of 0.015 cm", junc- 

 tion lifetime of 4 microseconds at 300° K, S equal to 0.008 cm, and Na 

 equal to 3 X lO" cm~l When these numbers are substituted into the 

 expressions for the coefficients, one obtains, at 300° K, 



I SCO = 1.4 X 10~* amperes, 



/o = 1.2 X 10~" amperes. 



DHO 



= 3.0 X 10 * amperes. 



Fig. 8 shows a semilogarithmic plot of the current -voltage characteristic 

 at 300° K over a range of 6| decades. The circles represent measured 

 points and the solid line is the theoretical curve. 



Using the variation of rii given in Fig. 8 and the temperature variations 

 as given in (4-11), one can obtain the coefficients for any temperature. 

 This has been done for two temperatures, 220° K and 375° K. Figs. 9 

 and 10 show the theoretical and experimental plots at 375° K and 220° K 



10-2 



5 



10-3 



ifl 



in 



a. 



UJ 



a. 



< 



z 



z 



UJ 



cr 

 a. 



D 

 O 



10-^ 

 5 



10-s 



IQ-® 

 10-7 



0.2 



0.3 

 V IN VOLTS 



0.4 



0.5 



0.6 



Fig. 9 — The calculated and observed current-voltage characteristic of a for- 

 ward biased junction at 375° K. 



