1000 



THE BELL SYSTEM TECHNICAL JOURNAL, JULY 1957 



taneous power the pulser could deliver, okw. These diodes are not con- 

 sidered in the subsequent analysis. 



The diodes were subjected to 50 yusec triangular voltage pulses which 

 would send them into breakdown. Variations in pulse conditions did not 

 effect the I-"\^ characteristic until large pulses destructively damaged the 

 unit. 



Fig. 14 is a sketch of a typical Y-l characteristic and Fig. 15, shows the 

 voltage- versus-time characteristic for a diode with a negative resistance. 

 The V-I curve can be broken into four regions: 



V IN VOLTS 



10" 



10"^ UJ 

 CC 



UJ 

 Q. 



< 



z 



10-2 - 



LU 



CC 



a: 



10-' 3 



10'^ 



Fig. 14 — A typical V-I characteristic for a diode in which a negative resistance 

 is observed. 



TIME 



Fig. 15 — A tj'pical V-T characteristic for a diode in which a negative re- 

 sistance is observed. 



