CONDUCTIVITY-MODULATED SILICON RECTIFIER 



1001 



1. A high impedance state before the breakdown voltage is reached. 



2. A current required to turn on the negative resistance; this cur- 

 rent varies from 10~ to 1 amp. 



3. The transition to a low impedance state. 



4. The low impedance region in which the current is probably limited 

 by the circuit impedance. 



The V-T curve can be broken in four regions: 



1. The time it takes the pulse to reach the breakdown voltage. 



2. The time the diode can maintain the breakdown voltage less than 

 1 jusec. This is beyond the resolution of the oscilloscope. 



3. The time required to fall to the low voltage (low impedance) state, 

 is less than 1 /isec. 



4. The remainder of the pulse in the low voltage state. 



Fig. 16 is a plot showing the current and voltage required to turn on a 

 negative resistance in several power rectifiers (area -^ 10~" cm). To 



10' 



a. 



LU 

 Q. 



< 



z 



UJ 



cc 

 a. 



D 



(> 



•- 



1» 



• 



It 



4) 



• 



200 



400 600 



V IN VOLTS 



800 



1000 



Fig. 16 — Current and voltage required to turn on a negative resistance in 

 several power rectifiers (A '-^ 10~^ cm^). 



