CONDUCTIVITY-MODULATED SILICON RECTIFIER 



1003 



of the device from the reverse I-V characteristic. This may be attributed 

 to the decrease in poAver capabilities of the body breakdown process in 

 the smaller devices. This also suggests that the smaller devices have a 

 less severe surface problem. 



The distribution of turn-on power for a few hundred small area recti- 

 fiers (A '^ 10~ cm") is shown in Fig. 18. The median of the distribution 

 occurs at 40 watts. Eighty percent of the miits will show a negative re- 

 sistance when pulsed at power levels between 3 and 500 watts. 



VII CONCLUSION 



High voltage rectifiers have been fabricated using several sources of 

 high resistivity material employing an uncomphcated diffusion process. 



< 

 5 



tr 



UJ 



O 



a. 



1000 

 800 



600 

 500 



400 



300 



200 



100 

 80 



60 

 50 



40 

 30 



20 



10 

 8 



6 

 5 



4 



3 



5 10 20 30 50 70 80 



DISTRIBUTION 



90 95 



99 



Fig. 18 — The distribution of turn-on power for small area rectifiers {A 

 cm^) plotted as a log normal distribution on probability paper. 



10-" 



