770 
fore in pursuing calculation, on the basis of (10) § 3, up to a se¬ 
cond approximation. For the sake of illustration, however, let us 
consider briefly the correction implied. 
To calculate v x — v 2 and h, — x 2 from equation (10) § 3 as it 
stands, we can follow the same method as that used in the last 
Article. Writing 
(i) <s■— 
we obtain in this way 
( 2 ) 
( 3 ) 
Vl — «’2 = 
K. 
^ — t ,_ 2(g -_j_ (f2 _|_gr s 
From (1), » combining with (9), § 3, we derive 
4:Jin 2 
e— 
l — 2S-\-S 2 -\-& r2 
0 — (S® — ÉF(S) 
( 4 >- . • 
(&). 
e 2 N 
h 2 (n 0 ‘ 
n‘ 
c* m * ( n 0 2 — w 2 ) 2 -f-4& 2 w 5 
. i » 
aii 
._4 Tin 2 ^ e 2 N 
c 2 m 
h 2 .2 Jen 
(n 0 2 — n 2 ) 2 4&% 2 
By way of an example let us take the case, already examined in 
§ 4,; of a «mono-electronic» substance. In this case 
h % 
m &< o> grc* _ 32 ^ ” 8 (tE\* _ 
^ ' c 8 v m ) (n Q 2 — w 2 ) 2 -f4Fw 2 
and 
(7) — = 0. 
We may therefore write in this case 
( 8 ) 
( 9 ) 
and 
TC» - 
i ) 
e 2 W. 
h [w 0 2 — (1 -|-j)w 5 ] , 
,c 
m. * 
K 2 — (1 -j-j) n 2 ] 2 -j- &k 2 n 2 
87 m 
* 2 W 
h . 2kn 
~~ c 
\ w 
[V - Çt-f j) K 2 ] 2 4- 4fc 2 » 2 
; n — 
î> 2 % 
i 2 — (1 -|- j) n 2 : : : 
*1 — 
■ 2kn 1 n ’ : . va:i . : , 
.::v;v;v 
where 
;V,:o 
)d ov¬ 
en) 
. , ' ; ,o.v . ;sm 
ù " j 
4tt ; e?N\ :r- ui :o -io.vo ov;. 
j = — . - h 2 . 
ï: . . ;ir ?. m ü 2 j» ïljvd. : æ 20 
